Semiconductor
Ultra High Temp Oxidation
Semiconductor Furnace Business
Ultra High Temp Oxidation
Model
- Model Name PF-UHTO61
Wafer
- Wafer Size 6inch (up to 8inch)
Capacity
- Wafer loading capacity 50~80
Heater
- Heater Material Super Kanthal
Chamber
- Tube & Boat material SiC
System Performance
- Temperature flatzone > 350mm
- Temperature stability < ±1.0°C
- Gas flow accuracy < ±1.0%
- Oxidation thickness uniformity < ±2.0%
Hardware Specification
- Maximum temperature 1600°C
- Process temperature range 800 ~ 1500°C
- Temperature ramp-up rate 30°C/min
- Wafer loading Full automation
- Process gas N2, O2, L-O2, DCE