Semiconductor
Ultra High Temp Anneal
Semiconductor Furnace Business
Ultra High Temp Anneal
Model
- Model Name PF-UHTA61
Wafer
- Wafer Size 6inch (up to 8inch)
Capacity
- Wafer loading capacity 50~80
Heater
- Heater Material Metal Tungsten
- Heater chamber structure Vacuum seal
- Heater insulation Multi layer insulator
- Water circulation all of heater chamber
- Ar purge system Heater & Tube inside
Chamber
- Tube & Boat material Graphite
System Performance
- Temperature flatzone > 350mm
- Temperature stability < ±1.0°C
- Gas flow accuracy < ±1.0%
- Rs uniformity < ±2.0%
Hardware Specification
- Maximum temperature 2200°C
- Process temperature range 800 ~ 2100°C
- Temperature ramp-up rate 50°C/min
- Wafer loading Full automation
- Process gas N2, Ar (optional H2)
- Wafer loading/unloading temperature RT ~ 400°C
- Pressure range atm ~ 5E-3 torr